SiC BJT minimizes losses in alternative energy applications

Abstract

Technologies such as Plug-in Hybrid Electric Vehicles (PHEV), Photovoltaics (PV), high efficiency electric motor drives, etc. will reduce energy related emissions and US dependency on fossil fuels and foreign oil. However commercial adoption of these technologies is slow to start due to high price and long financial payback. Silicon (Si) based power electronic systems in the above mentioned technologies form a significant part of the high price. New wide band gap devices such as Silicon Carbide (SiC) transistors are being considered (needed) as an alternative to Si transistors to improve energy efficiency, reduce passive component and thermal management size and cost, and thus reduce the overall cost of ownership to the end consumer. This paper will discuss the Bipolar Junction Transistor (BJT) as a suitable device type that is ideally suited for the widespread adoption of SiC transistors.