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The impact of the S/D extensions on the drain current characteristics of deep submicron Si nMOSFETs at 77 K

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194491
S. Biesemans, S. Simoen, S. Kubicek, K. De Meyer, C. Claeys
{"title":"The impact of the S/D extensions on the drain current characteristics of deep submicron Si nMOSFETs at 77 K","authors":"S. Biesemans, S. Simoen, S. Kubicek, K. De Meyer, C. Claeys","doi":"10.1109/ESSDERC.1997.194491","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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77 K时S/D扩展对深亚微米Si nmosfet漏极电流特性的影响
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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27th European Solid-State Device Research Conference
27th European Solid-State Device Research Conference
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