R. Endres, Tillmann A. Krauss, Frank Wessely, U. Schwalke
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引用次数: 1
Abstract
In this work, we present MOS capacitors and MOS transistors with a crystalline gadolinium oxide (Gd2O3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a replacement gate process. Initial results on ALD-TiN/Gd2O3/Si gate stacks on p- and n-substrates with equivalent oxide thicknesses (EOT) of 3.0nm and 1.5nm, respectively, are presented in this work.
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