{"title":"A 9b 100MS/s 1.46mW SAR ADC in 65nm CMOS","authors":"Yanfei Chen, Sanroku Tsukamoto, T. Kuroda","doi":"10.1109/ASSCC.2009.5357199","DOIUrl":null,"url":null,"abstract":"A 9b 100MS/s successive approximation register (SAR) ADC has been implemented in 65nm CMOS, with an active area of 0.012mm2. A tri-level based charge redistribution technique improves DAC switching energy efficiency and settling time, which is achieved by connecting bottom plates of differential capacitor arrays. The ADC achieves an SNDR of 53.1dB (8.53 ENOB) and consumes 1.46mW from a 1.2V supply, resulting in an FOM of 39fJ/conversion-step.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 46
Abstract
A 9b 100MS/s successive approximation register (SAR) ADC has been implemented in 65nm CMOS, with an active area of 0.012mm2. A tri-level based charge redistribution technique improves DAC switching energy efficiency and settling time, which is achieved by connecting bottom plates of differential capacitor arrays. The ADC achieves an SNDR of 53.1dB (8.53 ENOB) and consumes 1.46mW from a 1.2V supply, resulting in an FOM of 39fJ/conversion-step.