Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers

Abstract

Electrochemical capacitance-voltage (ECV) techniques and the four-point probe method have been used to determine the carrier profile N(x) and the depth of the p/sup +/-n junction of a boron implanted silicon wafer. It was found that the p/sup +/-n junction depth can provide reliable information only if certain limitations are considered in detail. The results obtained by ECV were compared with those computed by SUPREM.