Response Analysis of Resistor-type Gas Sensor with Bias Voltage Condition

K. Choi, Gyuweon Jung, Seongbin Hong, Y. Jeong, Wonjun Shin, Jinwoo Park, Chang-Yong Lee, Donghee Kim, Jong-Ho Lee
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引用次数: 3

Abstract

Many studies on the response analysis of resistor-type gas sensors have been reported. In this work, the bias dependent sensitivity of resistor-type gas sensors is investigated. The response to NO2 gas is 40% lower at high bias voltages than at low bias voltages. We analyze the effect of sensing material resistance and metal-semiconductor (sensing material) contact resistance on gas response. The measured results from the pattern to which the transmission line method was applied show that the bias-dependent response is observed only in the contact resistance component. This result is analyzed using the bias dependence of the Schottky barrier that occurs in the metal-semiconductor contact. The performance of the sensor can be improved by utilizing the bias dependent sensitivity characteristics.
偏置电压条件下电阻式气体传感器响应分析
关于电阻式气体传感器响应分析的研究已经有很多报道。本文研究了电阻式气体传感器的偏置灵敏度。对NO2气体的响应在高偏置电压下比在低偏置电压下低40%。分析了传感材料电阻和金属-半导体(传感材料)接触电阻对气体响应的影响。采用传输线法的模式的测量结果表明,只在接触电阻分量中观察到偏置相关响应。利用金属-半导体接触中肖特基势垒的偏置依赖性分析了这一结果。利用偏置相关的灵敏度特性可以提高传感器的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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