The GeSn laser — Enabler for monolithic integration of photonics on Si

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305915

S. Wirths, R. Geiger, Zoran Ikonié, C. Schulie-Braucks, D. Stange, N. von den Driesch, J. Hartmann, S. Mantl, H. Sigg, D. Buca, D. Grutzmacher

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Abstract

Reactive Gas Source Epitaxy has been employed to deposit SiGeSn/GeSn alloys on virtual Ge/Si (100) substrates. Optically pumped Fabry-Perol and a-disc lasers have been fabricated emitting from 2.0-2.6 μm in dependence of the Sn concentration.

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用于硅上光子学单片集成的GeSn激光器

反应气源外延技术已被用于在虚拟Ge/Si(100)衬底上沉积SiGeSn/GeSn合金。制备了光抽运法布里-佩罗激光器和a盘激光器，其发射波长随Sn浓度的变化而变化，波长范围为2.0 ~ 2.6 μm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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