T. Shino, Naoki Kusunoki, T. Higashi, Takashi Ohsawa, K. Fujita, K. Hatsuda, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Yasuyuki Kajitani, Ryo Fukuda, Yoji Watanabe, Yoshihiro Minami, A. Sakamoto, Jun Nishimura, Hiroomi Nakajima, M. Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama
{"title":"Floating Body RAM Technology and its Scalability to 32nm Node and Beyond","authors":"T. Shino, Naoki Kusunoki, T. Higashi, Takashi Ohsawa, K. Fujita, K. Hatsuda, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Yasuyuki Kajitani, Ryo Fukuda, Yoji Watanabe, Yoshihiro Minami, A. Sakamoto, Jun Nishimura, Hiroomi Nakajima, M. Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama","doi":"10.1109/IEDM.2006.346846","DOIUrl":null,"url":null,"abstract":"Technologies and improved performance of the floating body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the floating body cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 35
Abstract
Technologies and improved performance of the floating body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the floating body cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
