Performance of 18-kV Silicon Carbide High-Voltage Boost-Chopper Modules

Abstract

This work presents preliminary measurements of recently-fabricated, state-of-the-art SiC Insulated-Gate Bipolar Transistors (IGBTs) and Junction Barrier Schottky (JBS) diodes co-packaged in a high-performance module. The IGBT devices have an active area of 0.3 cm2, a drift region of 160 µm, and are rated for 20 kV and 20 A. The dual JBS diodes have a chip area of 0.65 cm2 and are rated for 10 kV each and 20 A. The IGBTs were co-packaged with JBS diodes in a boost-chopper configuration and utilize Al2O3 substrates for improved thermal performance. The devices-under-test were successfully tested at bus voltages up to 15 kV under resistive and inductive loads.