On the low-frequency noise and hot-carrier reliability in 0.13 /spl mu/m Partially depleted SOI MOSFETs

Abstract

Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 /spl mu/m CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.