An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging*

Sen Ren, Jianbing Xie, Q. Shen, Fei Wang, W. Yuan, Jinkuang Zhang
{"title":"An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging*","authors":"Sen Ren, Jianbing Xie, Q. Shen, Fei Wang, W. Yuan, Jinkuang Zhang","doi":"10.1109/INEC.2018.8441926","DOIUrl":null,"url":null,"abstract":"An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5–280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2018.8441926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5–280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.
用大气封装改进的SOI谐振压力传感器*
提出了一种改进的大气封装SOI谐振压力传感器。为了抑制谐振腔在膜片偏转时的垂直位置偏移,设计了一种采用悬挂连接桁架的特殊锚固结构,并引入了隔应力结构以提高谐振压力传感器的性能。实验结果表明,与传统的锚设计相比,谐振腔的垂直位置位移减小到7.3%。在3.5 ~ 280 kPa的满量程压力范围内,压力灵敏度为10.86 Hz/kPa,非线性为0.0138%FS,滞后误差为0.0047%FS,重复性误差为0.0071%FS,精度优于0.02%FS。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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