900 MHz 7.4 W SiGe heterojunction bipolar transistor

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836426

Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin

引用次数: 0

Abstract

The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.

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900 MHz 7.4 W SiGe异质结双极晶体管

采用与Si工艺兼容的简单平面工艺制备了微波功率用SiGe异质结双极晶体管(HBT)。SiGe HBT的电流增益为70，集电极结击穿电压约为28 V，发射极结击穿电压约为5 V。在共发射极配置和C类工作条件下，在900 MHz频率下获得了连续波输出功率为7.4 W、功率附加效率为53%、功率增益为8.7 dB的SiGe HBT。因此，当发射极区宽度为6 /spl mu/m时，SiGe HBT的发射极电流线性密度为1.7 A/cm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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