Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes

Abstract

We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photo-electrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.