Design and fabrication of low noise MODFET for 30-60 GHz band

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961496

A. M. Zubkov, A. S. Korablin, Y. Matveyev, A. Cherniavskiy, A. A. Dorofeyev

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Abstract

Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.

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30- 60ghz频段低噪声MODFET的设计与制造

本文介绍了低噪声肖特基场效应管的统一设计和基于电子光刻的生产技术。已生产3- 60ghz频段的HEMT和PHEMT系列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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