InP and GaAs components for 40 Gbps applications

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964387

D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki

引用次数: 25

Abstract

We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.

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用于40 Gbps应用的InP和GaAs组件

我们已经开发了许多用于40 Gbps应用的产品，包括GaAs和InP HEMT调制器驱动器，基于InP的单片集成PIN- tia电路，InP双异质结HBT TIAs和高响应双吸收PIN二极管。许多其他产品目前正在开发中，包括一些InP DHBT数字电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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