On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

Abstract

A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.