Wavelength-resonant, Surface-emitting Semiconductor Laser: A Novel Quantum Optical Structure

Abstract

Wavelength-Resonant, Surface-Emitting Semiconductor Laser: A Novel Quantum Optical Structure M.Y.A. Raja, S.R.J. Brueck, M. Osinski, C.F. Schaus, J.G. Mclnerney, University of New Mexico, Albuquerque, NM and T.M. Brennan, B.E. Hammons, Sandia National Laboratories, Albuquerque, NM. We designed, fabricated and demonstrated lasing action in a novel vertical surface-emitting laser structure. The MBE-grown structure is a seriesof 10-nm thick GaAs quantum wells separated by 120-nm thick AlGaAs barriers for a spatially periodic gain medium resonant with the lasing wavelength. Lasing has been achieved by optical pumping with a gain length of only 320 nm.