Preparation of polyamideimide films containing glass by sol-gel process and their dielectric breakdown

K. Iida, R. Nakanishi, S. Nakamura, G. Sawa, T. Okumura, C. Takeya
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引用次数: 3

Abstract

Polyamideimide (PAI) composite film containing 57 phr glass was prepared by the sol-gel process starting from metal alkoxides. The film is flexible, pale yellow, and transparent. The fracture surface indicates that the glass particles are uniformly dispersed and have a diameter of less than 0.1 /spl mu/m. The dielectric breakdown strength Eb of the glass-PAI film is almost equal to that of the PAI film. Eb decreases with sample thickness from 0.4 to 1.3 /spl mu/m and decreases with temperature from room temperature to 300/spl deg/C. These results indicate that PAI can be filled with the solgel glass without the introduction of defects which affect the dielectric breakdown. Eb is lowered by aging at 300/spl deg/C. The Eb of glass-PAI film decreases more than the Eb of PAI film. The decrease in Eb seems to be caused by oxidation of silane coupling agent as well as diphenylmethane groups in the PAI chain.<>
溶胶-凝胶法制备含玻璃聚酰胺酰亚胺薄膜及其介电击穿
以金属醇氧化物为原料,采用溶胶-凝胶法制备了含57 phr玻璃的聚酰胺酰亚胺(PAI)复合薄膜。薄膜柔韧,呈淡黄色,透明。断裂面表明,玻璃颗粒均匀分散,直径小于0.1 /spl mu/m。玻璃PAI膜的介电击穿强度Eb与PAI膜的介电击穿强度Eb基本相等。Eb值随样品厚度从0.4 ~ 1.3 /spl mu/m减小,随温度从室温到300/spl℃减小。这些结果表明,可以在不引入影响介电击穿的缺陷的情况下用凝胶玻璃填充PAI。在300/spl℃时效后,Eb降低。玻璃-PAI膜的Eb值比PAI膜的Eb值降低得更大。Eb的下降似乎是由硅烷偶联剂和PAI链上的二苯基甲烷基团的氧化引起的。
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