Area tradeoffs in a 3D Programmable Structured ASIC

N. Khairudin, Justin Spangaro, P. Beckett
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Abstract

A major obstacle to the uptake of advanced fabrication nodes by small industry is high NRE costs, mainly due to initial mask generation. The Programmable Structured ASIC (psASIC) is intended to bridge the gap between FPGA and Structured ASIC approaches to application design. The psASIC prototype environment comprises a pair of stacked chips, one containing only logic and the other comprising only interconnect and configuration RAM. Once an application has been prototyped and debugged, the interconnect layer can be replaced with a set of semi-standardized metallization masks in a way that preserves the critical timing paths of the prototype. We analyze the tradeoffs between vertical interconnect density and logic size in the psASIC using a 130nm 3D process as an example.
三维可编程结构化ASIC的面积权衡
小型工业采用先进制造节点的主要障碍是高NRE成本,主要是由于初始掩膜生成。可编程结构化ASIC (psASIC)旨在弥合FPGA和结构化ASIC应用设计方法之间的差距。psASIC原型环境由一对堆叠芯片组成,其中一个仅包含逻辑,另一个仅包含互连和配置RAM。一旦应用程序原型化和调试完成,互连层就可以用一组半标准化的金属化掩模替换,以保留原型的关键时序路径。我们以130nm 3D工艺为例,分析了psASIC中垂直互连密度和逻辑尺寸之间的权衡。
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