Small-sized SAW duplexer on non-flat SiO2/Al/LiNbO3 structure for UMTS Band I system

Hiroyuki Nakamura, H. Nakanishi, T. Tsurunari, J. Fujiwara, Y. Hamaoka, R. Goto
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引用次数: 6

Abstract

This paper describes the SiO2/Al/LiNbO3 structure for the SAW duplexer. Although this structure has large electromechanical coupling coefficient, it also supports unwanted spurious responses. They are categorized into two types of the Rayleigh-mode and transverse-mode. We have developed the novel spurious suppression techniques for these spurious; the SiO2 shape control technique for Rayleigh-mode and the scattered dummy electrode weighting for transverse-mode. We applied the proposed techniques to the balanced-type SAW duplexer for UMTS Band I system. The developed SAW duplexer was installed into a 2.5×2.0×0.5 mm3 package, and exhibited low insertion loss and high out-of-band rejection. The insertion losses in the Tx and Rx bands are 1.3dB and 2.0dB, respectively. The rejections in the Tx and Rx bands are 54 dB and 48 dB, respectively.
用于UMTS波段I系统的非扁平SiO2/Al/LiNbO3结构的小型SAW双工器
本文介绍了用于SAW双工器的SiO2/Al/LiNbO3结构。虽然这种结构具有较大的机电耦合系数,但它也支持不必要的杂散响应。它们可分为瑞利型和横向型两种。针对这些杂散,我们开发了新的杂散抑制技术;瑞利模式的SiO2形状控制技术和横向模式的散射假电极加重技术。我们将所提出的技术应用于UMTS波段一系统的平衡型SAW双工器。开发的SAW双工器安装在2.5×2.0×0.5 mm3封装中,具有低插入损耗和高带外抑制。在Tx和Rx频段的插入损耗分别为1.3dB和2.0dB。在Tx和Rx波段的抑制分别为54 dB和48 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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