D. Hisamoto, T. Kachi, S. Tsujikawa, A. Miyauchi, K. Kusukawa, N. Sakuma, Y. Homma, N. Yokoyama, F. Ootsuka, T. Onai
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引用次数: 1
Abstract
A compact FD-SOI CMOS fabrication process and device structure was demonstrated. A new damascene-dummy SAC process enabled to fabricate reliable contacts with ultra-thin SOI layers. We showed that using in-situ-boron-doped Si/sub x/Ge/sub 1-x/ as a gate material, the adequate threshold voltage of FD-SOI was realized.