A compact FD-SOI MOSFETs fabrication process featuring Si/sub x/Ge/sub 1-x/ gate and damascene-dummy SAC

D. Hisamoto, T. Kachi, S. Tsujikawa, A. Miyauchi, K. Kusukawa, N. Sakuma, Y. Homma, N. Yokoyama, F. Ootsuka, T. Onai
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引用次数: 1

Abstract

A compact FD-SOI CMOS fabrication process and device structure was demonstrated. A new damascene-dummy SAC process enabled to fabricate reliable contacts with ultra-thin SOI layers. We showed that using in-situ-boron-doped Si/sub x/Ge/sub 1-x/ as a gate material, the adequate threshold voltage of FD-SOI was realized.
一种具有Si/sub -x/ Ge/sub -x/栅极和damascena dummy SAC的紧凑FD-SOI mosfet制造工艺
介绍了一种紧凑的FD-SOI CMOS制作工艺和器件结构。一种新的大马士革假SAC工艺能够与超薄SOI层制造可靠的接触。结果表明,采用原位掺硼Si/sub -x/ Ge/sub - 1-x/作为栅极材料,可以实现FD-SOI的适当阈值电压。
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