Novel 36 GHz GaAs frequency doublers using (M)MIC coplanar technology

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188204

M.A. Tuko, I. Wolff

引用次数: 10

Abstract

The design and performance of single-device and balanced versions of (M)MIC (microwave and monolithic microwave integrated circuit) GaAs FET frequency doublers from 18 GHz to 36 GHz, fabricated in purely CPW techniques, are presented. Coplanar discontinuities which are usually neglected are taken into consideration in the analysis and design. Spiral inductors and their associated parasitic capacitances are used for impedance matching and phase shifting purposes. Simulation and measurement results are in good agreement. The investigated doublers have a minimum conversion loss of 7 dB.<>

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采用(M)MIC共面技术的新型36ghz GaAs倍频器

介绍了单器件和平衡版本的(M)MIC(微波和单片微波集成电路)GaAs FET倍频器的设计和性能，这些倍频器由纯CPW技术制造，频率范围为18 GHz至36 GHz。在分析和设计中考虑了通常被忽略的共面不连续。螺旋电感及其相关的寄生电容用于阻抗匹配和相移目的。仿真结果与实测结果吻合较好。所研究的倍频器的最小转换损耗为7db。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1992 IEEE Microwave Symposium Digest MTT-S

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