Longitudinal Displacement Measurement of Lead Zirconate Titanate Thick Films Deposited on Silicon substrates

T. Iijima, H. Okino, T. Yamamoto
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Abstract

10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.
硅衬底上锆钛酸铅厚膜的纵向位移测量
在Pt/Ti/SiO2/Si衬底上沉积了10 μ m厚的PZT薄膜,在Si衬底上制备了20 ~ 500 μ m直径的PZT厚膜盘。利用双光束干涉仪测量了蝶形位移曲线的上、下、下与上相减,并与有限元模拟比较了圆盘直径对蝶形位移的影响。当PZT圆盘直径d与PZT薄膜厚度t之比小于3,即对于10 μ m厚的PZT薄膜,dlt < 3时,夹紧效应消除。因此,当dlt < 3时,可以评估PZT薄膜的实际纵向位移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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