An X-band Internally Matched GaN Power Amplifier with 705W Peak Power and 51.7% PAE

Abstract

One high power and high efficiency fully internally-matched GaN power amplifier operating at X band is presented. The device is realized by matching four GaN HEMT dies of 4*18-mm gate periphery. To reduce the size, single layer capacitors with high permittivity are used, and the impedance matching circuits are fabricated on AI2O3ceramic substrate. Within the frequency band of 8.2-8.8 GHz, the saturated output power, power gain and PAE of the device were measured as more than 660 W, 9.8 dB and 44.5% based on the pulse mode of 100 μs pulse width and 10% duty. Furthermore, the highest output power and PAE can reach to 705 W and 51.7% respectively. Due to the compact size of the package, 26mm x 17.4mm, the results show the highest output power at this frequency among the reported literatures.