The MTO thyristor-a new high power bipolar MOS thyristor

Abstract

A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway.