Parasitic effect analysis for a differential LNA design

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) Pub Date : 2003-12-10 DOI:10.1109/ICM.2003.238558

Moon-sun Kim, J. Yi, Hyung-Joun Yoo

引用次数: 4

Abstract

In this paper, parasitic effect of CMOS differential LNA is discussed. The sources of parasitic effects are MOS transistor, differential structure, pad, and spiral inductor. Those parasitic effects are analyzed, and differential LNA is simulated with parasitic effects and measured.

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差分LNA设计的寄生效应分析

本文讨论了CMOS差分LNA的寄生效应。寄生效应的来源有MOS晶体管、差动结构、焊盘和螺旋电感。对这些寄生效应进行了分析，并对差分LNA进行了模拟和测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)

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