A Novel Low-Voltage Low-Power FGMOS and CMOS Resister-Based Current Mirror

Harshmani Yadav, Urvashi Bansal
{"title":"A Novel Low-Voltage Low-Power FGMOS and CMOS Resister-Based Current Mirror","authors":"Harshmani Yadav, Urvashi Bansal","doi":"10.1109/ICIERA53202.2021.9726723","DOIUrl":null,"url":null,"abstract":"A new Floating gate metal oxide semiconductor (FGMOS) and a CMOS Resistor-based current mirror (RBCM) with very low voltage requirement at input and output voltage is presented in this paper. The proposed circuit employs two resistors arranged in a symmetrical configuration, one control circuit and FGMOS the resulting error in two resistors circuits is subtracted to each other, this property reduces error and improves precision. The circuit is designed and investigated by using Cadence virtuoso, EDA tool with 180 nm technology under supply voltage of 0.75 V. This circuit has the advantage of high output impedance, low input impedance, wide input swing, large output swing, high linearity which makes this circuit a preferred choice for high performance low-voltage, wide range of input voltage and low-power application. The simulation results show are quite motivating as this circuit offers extremely low input impedance of 370 $\\Omega$, output impedance of 1 $7\\mathrm{M}\\Omega$ and power consumption of 150 $\\mu$ A.","PeriodicalId":220461,"journal":{"name":"2021 International Conference on Industrial Electronics Research and Applications (ICIERA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Industrial Electronics Research and Applications (ICIERA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIERA53202.2021.9726723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A new Floating gate metal oxide semiconductor (FGMOS) and a CMOS Resistor-based current mirror (RBCM) with very low voltage requirement at input and output voltage is presented in this paper. The proposed circuit employs two resistors arranged in a symmetrical configuration, one control circuit and FGMOS the resulting error in two resistors circuits is subtracted to each other, this property reduces error and improves precision. The circuit is designed and investigated by using Cadence virtuoso, EDA tool with 180 nm technology under supply voltage of 0.75 V. This circuit has the advantage of high output impedance, low input impedance, wide input swing, large output swing, high linearity which makes this circuit a preferred choice for high performance low-voltage, wide range of input voltage and low-power application. The simulation results show are quite motivating as this circuit offers extremely low input impedance of 370 $\Omega$, output impedance of 1 $7\mathrm{M}\Omega$ and power consumption of 150 $\mu$ A.
一种新型低压低功耗FGMOS和CMOS电阻电流反射镜
提出了一种新型的浮栅金属氧化物半导体(FGMOS)和一种输入输出电压极低的基于CMOS电阻的电流反射镜(RBCM)。该电路采用两个电阻对称排列,一个控制电路和FGMOS,两个电阻电路产生的误差相互减去,这种特性减少了误差,提高了精度。在电源电压为0.75 V的情况下,利用EDA工具Cadence virtuoso采用180 nm技术对电路进行了设计和研究。该电路具有高输出阻抗、低输入阻抗、宽输入摆幅、大输出摆幅、高线性度等优点,是高性能低电压、宽输入电压范围和低功耗应用的首选电路。仿真结果表明,该电路的输入阻抗极低,为370 $\Omega$,输出阻抗为1 $7\mathrm{M}\Omega$,功耗为150 $\mu$ A。
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