A 1.2 GHz Bandwidth Baseband Analog Circuit in 65nm CMOS for Millimeter-Wave Radio

Jungah Kim, Shinil Chang, Seungsoo Kim, Hyunchol Shin
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引用次数: 1

Abstract

This paper presents a wide-bandwidth baseband analog (BBA) amplifier circuit in 65 nm CMOS for 5G mm-wave radio applications. The BBA is composed of an input buffer with dc offset cancellation (DCOC), four-stage variable gain amplifiers (VGAs), and 50-ohm driving output buffers. All blocks are designed in differential to enhance the common mode rejection. The DCOC is based on a body-bias control method for mitigating conflict with the gain control part. Designed in 65nm CMOS, the performances are assessed through post-layout simulations. The BBA consumes 30.2 mW from a 1.2 V supply. The total gain range is 6.2 - 34.5 dB. The bandwidth varies from 1.2 to 2.2 GHz across the total gain tuning range. The entire layout size is 0.053 mm2,
一种用于毫米波无线电的65nm CMOS 1.2 GHz带宽基带模拟电路
本文提出了一种用于5G毫米波无线电应用的65nm CMOS宽带基带模拟(BBA)放大器电路。BBA由带直流失调抵消(DCOC)的输入缓冲器、四级可变增益放大器(VGAs)和50欧姆驱动输出缓冲器组成。所有模块都采用差分设计,以增强共模抑制。DCOC基于体偏置控制方法,以减轻与增益控制部分的冲突。采用65nm CMOS设计,通过布局后仿真对其性能进行了评估。BBA从1.2 V电源消耗30.2 mW。总增益范围为6.2 - 34.5 dB。在整个增益调谐范围内,带宽从1.2 GHz变化到2.2 GHz。整个布局尺寸为0.053 mm2,
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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