Direct experimental evidence for a dominant hole trapping center in SIMOX oxides

Abstract

Experimental evidence is presented that indicates that E' centers or E'-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E' center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO/sub 2/ films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 AA thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/ lambda =10.2 eV) and ultraviolet (hc/ lambda =5 eV) irradiation sequences.<>