The Performance of GaAs Lumped Element Phase Shifters at S and C Band

C. Suckling, P.N. Rigby, T. Bambridge, R. Pengelly, R. S. Butlin
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引用次数: 8

Abstract

The design and performance of an S-band analogue/digital phase shifter GaAs IC chip set, developed for use in a phased array radar transmitter, will be described. The circuits have been used to demonstrate successfully the feasibility of using GaAs IC technology in this application, at a frequency where the more conventional transmission line techniques cannot be used easily due to the large size of the circuit elements. The present circuits rely on the use of lumped components, to minimise the area of GaAs used. The extension of the techniques to higher frequencies (C-band) will also be discussed.
GaAs集总元件移相器在S和C波段的性能
将描述用于相控阵雷达发射机的s波段模拟/数字移相器GaAs IC芯片组的设计和性能。电路已被用来成功地证明在这种应用中使用GaAs集成电路技术的可行性,在这种频率下,由于电路元件的大尺寸,更传统的传输线技术不能很容易地使用。目前的电路依赖于集总元件的使用,以尽量减少GaAs的使用面积。还将讨论将这些技术扩展到更高频率(c波段)的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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