HV-IGBT drives and their applications

Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475) Pub Date : 1999-07-27 DOI:10.1109/PEDS.1999.792660

P. Bhooplapur, B.P. Schmitt, G. Neeser

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引用次数: 10

Abstract

Universal in low voltage inverters and widely in use for a decade, the IGBT (insulated gate bipolar transistor) has proven its reliability in numerous applications. The one drawback is the limitation in output power achievable at these low voltages. Series connection of low voltage IGBTs to achieve higher output voltages is not an elegant and practical solution due to the problem of absolutely simultaneous switching necessary for safe operation. The recent introduction of HV-IGBTs (high-voltage IGBT) has finally made it possible to build the medium voltage drive up to 6.6 kV. HV IGBTs presently in use have a blocking voltage rating of 3300 V at 1200 A and devices of 6500 V at 600 A will be available in the near future. The standard three-level inverter output voltage of 2.3 kV can be realised with only one element whereas output voltages of 3.3 kV and 4.16 kV are realised with two elements in series. Some of the applications include rubber industry, ship propulsion, chemical and metals industries.

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HV-IGBT驱动器及其应用

IGBT(绝缘栅双极晶体管)在低压逆变器中广泛使用了十年，在众多应用中证明了其可靠性。一个缺点是在这些低电压下可以达到的输出功率的限制。由于安全运行所必需的绝对同时开关问题，低压igbt串联以实现更高的输出电压并不是一种优雅和实用的解决方案。最近引入的hv -IGBT(高压IGBT)最终使建造高达6.6 kV的中压驱动器成为可能。目前使用的高压igbt在1200a时的屏蔽电压额定为3300v，在不久的将来将提供6500v和600a的器件。标准的三电平逆变器输出电压2.3 kV只需一个元件即可实现，而3.3 kV和4.16 kV的输出电压则需要两个元件串联即可实现。一些应用包括橡胶工业，船舶推进，化学和金属工业。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)

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