An Active Reflection Phase Shifter with High Gain for Reconfigurable Reflectarrays above 0.24 THz

Abstract

This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 $\mu$mSiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179° at 257.5 GHz. The phase-shifter core occupies only 0.007 mm2 of IC area.