Carbon-doped p-type In/sub 0.53/Ga/sub 0.47/As and its application to InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors

Abstract

P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<>