{"title":"A Millimeter-Wave Bandpass Filter Based on Substrate Integrated Dielectric Resonator","authors":"Wei Sheng Tang, Shao Yong Zheng, Yong Mei Pan","doi":"10.23919/ISAP47258.2021.9614434","DOIUrl":null,"url":null,"abstract":"In this paper, a substrate integrated dielectric resonator (SIDR) is utilized to realize a novel millimeter-wave bandpass filter (BPF) for the first time. The dielectric resonator is fabricated using substrate and packaged by multi-layer PCB technology. Two degenerated modes TEδ11 and TE11δ1 are used and excited by the slot coupling feeding mechanism. A prototype operating at 30 GHz is designed and simulated. The simulated result demonstrates a low insertion loss of 1.57 dB with a fractional bandwidth of 6% considering the metal and dielectric loss. Advantages of low profile, light weight, and convenience in integration can be also observed.","PeriodicalId":132941,"journal":{"name":"2021 International Symposium on Antennas and Propagation (ISAP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Symposium on Antennas and Propagation (ISAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISAP47258.2021.9614434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a substrate integrated dielectric resonator (SIDR) is utilized to realize a novel millimeter-wave bandpass filter (BPF) for the first time. The dielectric resonator is fabricated using substrate and packaged by multi-layer PCB technology. Two degenerated modes TEδ11 and TE11δ1 are used and excited by the slot coupling feeding mechanism. A prototype operating at 30 GHz is designed and simulated. The simulated result demonstrates a low insertion loss of 1.57 dB with a fractional bandwidth of 6% considering the metal and dielectric loss. Advantages of low profile, light weight, and convenience in integration can be also observed.