Defect chalcopyrite Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/ materials and high Ga-content Cu(In,Ga)Se/sub 2/-based solar cells

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564251

M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi

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引用次数: 7

Abstract

Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (00.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

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缺陷黄铜矿Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/材料和高Ga含量Cu(In,Ga)Se/sub 2/基太阳能电池

缺陷黄铜矿Cu(In/sub - 1-x/Ga)/sub - 3/Se/sub - 5/(00.3)的晶体学、光学和电学性质是由于在黄铜矿/缺陷黄铜矿界面处具有相对较差的结构和电学性质。我们证明了这种情况可以避免(对于x>0.3的吸收体)，通过减少吸收体表面附近区域的Ga含量来适当地设计这样的界面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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