Mass-productive high performance 0.5 /spl mu/m embedded FRAM technology with triple layer metal

Abstract

Mass-productive 0.5 /spl mu/m embedded FRAM with triple layer metal (one local interconnect and two Aluminum interconnects) has been developed. Fabrication processes are fully compatible with high-end logic LSIs using W-CVD via filling process. Using the high performance PZT capacitor and optimized metallization processes, we achieved high retention reliability even after triple layer metal process.