{"title":"A 32-bit GaAs IEEE floating point multiplier using Trailing-1's rounding algorithm","authors":"S. Cui, N. Burgess, M. Liebelt, K. Eshraghian","doi":"10.1109/ETD.1995.403466","DOIUrl":null,"url":null,"abstract":"The paper presents a GaAs 32-bit IEEE floating point multiplier. A modified carry save array is used in conjunction with Booth's algorithm to reduce the partial product addition and interconnection. A special rounding technique called Trailing-1's Predictor is used to speed up the final addition and rounding. This chip uses a new layout methodology for easy design structure and improved GaAs technology layout density. The combination of the fast arithmetic architecture and compact layout style achieves 4ns multiplication time with 3.5 W power dissipation at 75/spl deg/C. The area is 2.43 mm by 3.77 mm (excluding pads) and uses 28000 transistors to give a density of 3056 transistors/mm/sup 2/ for 0.8/spl mu/m GaAs technology.<<ETX>>","PeriodicalId":302763,"journal":{"name":"Proceedings Electronic Technology Directions to the Year 2000","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Electronic Technology Directions to the Year 2000","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETD.1995.403466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The paper presents a GaAs 32-bit IEEE floating point multiplier. A modified carry save array is used in conjunction with Booth's algorithm to reduce the partial product addition and interconnection. A special rounding technique called Trailing-1's Predictor is used to speed up the final addition and rounding. This chip uses a new layout methodology for easy design structure and improved GaAs technology layout density. The combination of the fast arithmetic architecture and compact layout style achieves 4ns multiplication time with 3.5 W power dissipation at 75/spl deg/C. The area is 2.43 mm by 3.77 mm (excluding pads) and uses 28000 transistors to give a density of 3056 transistors/mm/sup 2/ for 0.8/spl mu/m GaAs technology.<>