Ultra low DC power consumption In-P HITFET based differential oscillator

Abstract

The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.