Crystallographic Growth Pattern of Well-Ordered “ripple-Shaped” Microstructures on Mn Thin Films

A. Chanda, J. Sengupta, C. Jacob
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Abstract

A series of investigation were performed on Mn films which were deposited on GaAs substrates by thermal evaporation. The Mn films exhibit a highly ordered ripple-shaped structure with good periodicity, creating an exclusive patterning tool to construct two dimensional arrays of confined microstructures. The influence of the thickness of the Mn film in producing the ripple structure was clearly observed. In addition, the annealing time was considered as the major parameter to control the ordering of the ripple structure. A model for the creation of stress-driven microstructure is also proposed which indicates that Mn thin films grow on GaAs substrates in three stages: in the primary stage, the growth occurs via two-dimensional nucleation process; as the thickness increases, the stress is released by the film via creation of additional surface roughness which produce ripples; and finally an island-like growth occurs because of the non-uniform distribution of stress along the surface of the film.
Mn薄膜上有序“波纹状”微结构的晶体学生长模式
采用热蒸发法制备了砷化镓衬底上的锰薄膜。Mn薄膜呈现出高度有序的波纹状结构,具有良好的周期性,为构建受限微结构的二维阵列提供了独特的图像化工具。我们清楚地观察到锰膜厚度对波纹结构产生的影响。另外,将退火时间作为控制纹波结构有序度的主要参数。本文还提出了一个应力驱动微观结构的生成模型,该模型表明锰薄膜在GaAs衬底上的生长分为三个阶段:在初级阶段,通过二维成核过程进行生长;随着厚度的增加,薄膜通过产生额外的表面粗糙度来释放应力,从而产生波纹;最后,由于应力沿薄膜表面的不均匀分布,出现了岛状生长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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