{"title":"A Design of V-band Reconfigurable SPDT Switch/Power Divider Based on Slotted SIW","authors":"Junchao Ji, Zhefan Chen, Xidong Wu, Jinfang Zhou","doi":"10.23919/USNC/URSI49741.2020.9321609","DOIUrl":null,"url":null,"abstract":"In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ0 × 2.36λ0.","PeriodicalId":443426,"journal":{"name":"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/USNC/URSI49741.2020.9321609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ0 × 2.36λ0.