High-Precision Precharge Control Circuit for SRAM in Convolutional Neural Network Processor

Xiaowei Chen
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Abstract

This paper proposals a high precision pre-charge control circuit for SRAM used in convolutional neural network (CNN) processors. The control circuit has a precision of 1 ps and can be easily adjusted by changing the number of buffers in the delay cell and the tristate buffer sizes. A 1 KB CNN processor SRAM is designed and simulated to further verify our design concepts. Layout area overhead are also analyzed for the proposed control circuit.
基于卷积神经网络处理器的SRAM高精度预充控制电路
提出了一种用于卷积神经网络(CNN)处理器的SRAM高精度预充电控制电路。控制电路的精度为1ps,可以通过改变延迟单元中的缓冲区数量和三状态缓冲区大小来轻松调整。设计并仿真了一个1kb的CNN处理器SRAM,进一步验证了我们的设计理念。对所提出的控制电路的布局面积开销进行了分析。
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