Synthesis of Hydrogen Getter Zr1-xCox (x=0-1) Alloy Films by Magnetron Co-Sputtering

B. Dhonge, Akash Singh, A. Panda, V. Srihari, R. Thirumurugesan, P. Parida, R. Mythili, P. Parameswaran
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Abstract

The Zr1-xCox(x=0, 0.25, 0.53, 0.63, 1) thin films were deposited on quartz substrate using magnetron co-sputtering of Zirconium and Cobalt targets in confocal geometry. A constant pulsed direct current (PDC) on Zirconium and radio frequency (RF) of various powers on Cobalt target were applied to vary the concentration of Co in the Zr1-xCox film. The film composition was quantified using EDX measurements. The hydrogen storage capacity of these films was studied using an in-house developed hydrogen adsorption setup, in which the electrical resistivity of the film was monitored as a function of hydrogen partial pressure and temperature. The films' surface morphology and crystal structure before and after hydrogenation were characterized using atomic force microscopy and grazing incidence X-ray diffraction techniques using synchrotron radiation, respectively. An increase in the particle size after hydrogenation was observed for all the films. An increase in resistivity was also observed due to the absorption of hydrogen in all the compositions. The near stoichiometric film Zr0.47Co0.53 showed the highest hydrogen absorption level at 200 oC at all partial pressures. However, a decrease in the response at temperatures higher than 200 oC was observed in the film containing a Co concentration. The mechanism for the increase in resistivity of the film on hydrogenation is explained. Keywords: ZrCo alloy, hydrogen getter, magnetron co-sputtering, four-probe resistivity, thin film.
磁控共溅射法制备Zr1-xCox (x=0-1)合金吸氢膜
采用磁控共聚焦溅射法在石英衬底上制备了Zr1-xCox(x= 0,0.25, 0.53, 0.63, 1)薄膜。在Zr1-xCox薄膜上施加恒定脉冲直流电流(PDC)和不同功率的射频(RF)来改变Co的浓度。使用EDX测量对膜成分进行定量。利用内部开发的氢气吸附装置研究了这些膜的储氢能力,其中监测了膜的电阻率作为氢气分压和温度的函数。利用同步辐射原子力显微镜和掠入射x射线衍射技术分别对加氢前后膜的表面形貌和晶体结构进行了表征。氢化后,所有膜的粒径都有所增加。由于所有成分中氢的吸收,电阻率也有所增加。近化学计量膜Zr0.47Co0.53在200℃、各分压下的吸氢量最高。然而,在温度高于200℃时,在含有Co浓度的薄膜中观察到响应降低。解释了加氢时膜电阻率升高的机理。关键词:ZrCo合金,吸氢剂,磁控共溅射,四探针电阻率,薄膜
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