Broadband Medium-Power Transistor Amplifier 12-18 GHz

Abstract

A medium-power two-stage transistor microwave amplifier for frequency band of 12 to 18 GHz using eight packaged HEMTs has been designed and developed. Gain over 16 dB, output power P-1 db > 22 dBm and return loss better than 10 dB both on the input and output has been achieved in the whole band. The input and output are DC grounded to protect the amplifier from electrostatic discharge (ESD). Mutually linked AWR microwave office circuit simulator, 3D EM field simulator CST microwave studio and precise small-signal s-parameters vector measurements were used for the design.