Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND

L. Breuil, M. Popovici, J. Stiers, A. Arreghini, S. Ramesh, G. V. D. Bosch, J. V. Houdt, M. Rosmeulen
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Abstract

In this paper, we optimize the retention in gate stacks including ferroelectric materials for program / erase boosting. The improved program performance by exploiting ferroelectricity in a material used for charge storage medium has been confirmed. However, the retention properties of such materials still need to be improved. As an alternative, we propose a dual charge trapping layer made of thin Si3N4 / ferroelectric high-K material that can keep the retention to the level of a conventional ONO gate stack, while benefiting from the boosting effect. For application as blocking oxide, the improvement in program / erase due to capacitance boosting could also be observed, but the use of a thick high-K material at this position causes retention issues that are difficult to solve. Alternatively, placing a thin high-K below a SiO2 blocking layer can improve programming without penalty in retention. This calls for developing ultra-thin high-K materials with ferroelectric properties for further improvement.
三维NAND中铁电增强栅极堆的保持优化
在本文中,我们优化了包含铁电材料的栅极堆栈中的保留,用于程序/擦除增强。利用电荷存储介质材料中的铁电性提高了程序性能。然而,这种材料的保留性能仍有待改进。作为替代方案,我们提出了一种由Si3N4 /铁电高k材料制成的双电荷捕获层,该层可以将保留率保持在传统ONO栅极堆栈的水平,同时受益于增强效应。对于阻塞氧化物的应用,由于电容增强,程序/擦除的改善也可以观察到,但是在这个位置使用厚的高k材料会导致难以解决的保留问题。或者,在SiO2阻挡层下面放置薄的高k可以改善编程,而不会影响保留。这需要开发具有铁电性能的超薄高k材料以进一步改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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