Effective channel length in Junctionless Nanowire Transistors

Abstract

The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the gate length.