A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories

2023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH) Pub Date : 2023-03-15 DOI:10.1109/INFOTEH57020.2023.10105557

Wensheng Wang, K. Takai, Ko Nakamura, Mitsuaki Oikawa, S. Ozawa, Kouichi Nagai, S. Mihara, Y. Hikosaka, H. Saito, M. Kojima, T. Eshita, K. Nomura, Hideshi Yamaguchi

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Abstract

We successfully developed a lanthanum (La)-doped Pb (Zr, Ti)O3(PLZT) based ferroelectric capacitor (FC) using a new electrode material of bismuth (Bi) doped SrRuO3 (B-SRO) aiming at reduction of energy consumption of ferroelectric random access memory (FeRAM) by suppressing the leakage current of its FC. Our employed B-SRO layer is effective for suppressing the leakage current due to reducing atomic interdiffusions of Iridium and lead between IrOx top electrode (TE) and PLZT. Space charge limited conduction (SCLC) is dominant in the leakage current of the FC with B-SRO, while defect assisted conduction possibly includes in the leakage current of FC without B-SRO in addition with the SCLC. Switchable polarization, depending on the B-SRO thickness, has largest value for 1.0-1.5 nm thick B-SRO. Excellent imprint and switching (fatigue) endurances is proven on the FC with 1 nm thick B-SRO.

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一种用于高可靠la掺杂Pb (Zr, Ti) o3基铁电存储器的新型IrOx/ bi掺杂SrRuO3电极结构

利用铋(Bi)掺杂SrRuO3 (B-SRO)这一新型电极材料，成功研制出了镧(La)掺杂Pb (Zr, Ti)O3(PLZT)基铁电电容器(FC)，旨在通过抑制铁电随机存储器(FeRAM) FC的漏电流来降低其能耗。我们所采用的B-SRO层由于减少了IrOx顶部电极(TE)和PLZT之间铱和铅的原子间扩散而有效地抑制了泄漏电流。含B-SRO的光纤漏电流中以空间电荷限制传导(SCLC)为主，而不含B-SRO的光纤漏电流中除了含有SCLC外，可能还包括缺陷辅助传导。根据B-SRO厚度的不同，可切换极化在1.0-1.5 nm厚的B-SRO中值最大。具有1nm厚B-SRO的FC具有优异的压印和开关(疲劳)耐久性。

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来源期刊

2023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH)

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