Development of RIE-textured silicon solar cells

Abstract

A maskless plasma texturing technique using reactive ion etching (RIE) for silicon solar cells results in a very low reflectance of 5.4% before, and 3.9% after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma-damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased J/sub sc/ due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of nontoxic, noncorrosive SF/sub 6/ makes this process attractive for mass production.