Zener Diode Reverse Breakdown Voltage as a Simultaneous Heating and Temperature Sensing Element

R. McAfee, M. Fish, J. Gess
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Abstract

Near-junction, low-cost, and high accuracy temperature-sensing methods are needed for electronics cooling. Electrical components, either thermal test die or active integrated circuit devices, can be used as temperature sensors provided that a temperature sensitive parameter is available and calibrated. Zener diodes lend themselves to use as static or dynamic temperature sensors when integrated into an existing package. However, the use of Zener diodes to simultaneously heat and sense has not been explored in literature. When a Zener diode with a high reverse breakdown voltage is selected the power dissipation can be fine-tuned to desired heating conditions and be concurrently used to sense temperature. A methodology for using Zener reverse breakdown to generate accurate junction heating curves is established.The reverse breakdown voltage of the diodes is used to define I-V-T surfaces for calibration. Calibration temperatures are established using a single-phase liquid cooled cold plate. Thermal calibration methods are developed based on existing JEDEC standards for electrical test methods for simple integrated circuit devices.The methodology was applied to develop phase change material heating curves and compare them to other thermal solutions. The developed methodology can be used for future applications requiring simultaneous heating and sensing.
齐纳二极管反向击穿电压作为同时加热和温度传感元件
电子冷却需要近结、低成本和高精度的温度传感方法。电子元件,无论是热测试芯片或有源集成电路器件,都可以用作温度传感器,只要有温度敏感参数可用并经过校准。齐纳二极管借给自己作为静态或动态温度传感器集成到现有的封装。然而,利用齐纳二极管同时加热和感知还没有在文献中探索。当选择具有高反向击穿电压的齐纳二极管时,可以将功耗微调到所需的加热条件,并同时用于温度检测。建立了一种利用齐纳反击穿生成精确结热曲线的方法。二极管的反向击穿电压用于定义用于校准的I-V-T表面。使用单相液冷冷板建立校准温度。热校准方法是基于现有的JEDEC标准开发的,该标准适用于简单集成电路器件的电气测试方法。应用该方法绘制了相变材料的加热曲线,并将其与其他热解进行了比较。所开发的方法可用于需要同时加热和传感的未来应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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