Test structure for measurement of ion stopping power

Abstract

The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He/sup 2+/ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula.