Simulation of full-color III-nitride RGB LED

Abstract

Full-color III-nitride light-emitting diode (LED) with complete covering of standard red-green-blue (RGB) optical emission spectrum is demonstrated. Intermediate carrier blocking layers (ICBLs) are introduced into multi-quantum well (MQW) active region of III-nitride multi-color LED to control the carrier injection distribution among the optically active quantum wells (QWs) with different emission wavelengths. Strong interdependence between ICBL parameters and active QW characteristics represents the main challenge for the full-color LED design and implementation. We show that ICBLs are essential elements of full-color RGB LED design requiring optimization both in material composition and doping level. Prototype ICBL-LED structure has been grown at Ostendo Technologies Inc. demonstrating tunable full-color operation.